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  • Advances and prospects in visible light communications
  • Synthesis and electroluminescence characterization of a new aluminum complex, [8- hydroxyquinoline] bis [2, 2'bipyridine] aluminum Al(Bpy)2q
  • We have synthesized and characterized a new electroluminescent material, [8-hydroxyquinoline] bis[2,2’bipyridine] aluminum. A solution of this material Al(Bpy)2q in toluene showed absorption maxima at 380 nm,which was attributed to the moderate energy( π–π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(Bpy)2q in the toluene solution showed a peak at 518 nm. This material shows thermal stability up to300 ℃. The structure of the device is ITO/F4-TCNQ(1 nm)/α-NPD(35 nm)/Al(Bpy)2q(35 nm)/ BCP(6 nm)/Alq3(28 nm)/Li F(1 nm)/Al(150 nm). This device exhibited a luminescence peak at 515 nm(CIE coordinates, xD0.32,yD0.49). The maximum luminescence of the device was 214 cd/m2 at 21 V. The maximum current efficiency of OLED was 0.12 cd/A at 13 V and the maximum power efficiency was 0.03 lm/W at 10 V.
  • New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials
  • Green preparation of Au nanoparticles for electrochemical detection of H2O2
  • Impact of Cu-rich growth on the CueZnSnSe4 surface morphology and related solar cells behavior
  • Excellent performance of gas sensor based on In2O3-Fe2O3 nanotubes
  • Ageing of GaN HEMT devices: which degradation indicators?
  • Cu2O-based solar cells using oxide semiconductors
  • We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO(AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO–MgO and Ga2O3–Al2O3systems, higher conversion efficiencies(á/ as well as a high open circuit voltage(Voc/ were obtained by using a relatively small amount of MgO or Al2O3, e.g.,(ZnO)0:91–(MgO)0:09 and(Ga2O3/0:975–(Al2O3/0:025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3–Ga2O3–MgO–ZnO(AGMZO)multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Vocof 0.98 V and an á of 4.82% were obtained. In addition, an enhanced á and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O(Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an á of 6.25% and a Vocof 0.84 V were obtained in a Mg F2/AZO/n-(Ga2O3–Al2O3//p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 cm and a(Ga0:975Al0:025/2O3 thin film wi...
  • Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys
  • We have investigated the performance of a spin transfer torque random access memory(STT-RAM)cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density(to switch the magnetization of the free layer of the STT RAM cell) is reduced.
  • Designing of I eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell
  • Sentaurus based modeling and simulation for GFET's characteristic for ssDNA im- mobilization and hybridization
  • Active multi-mode-interferometer broadband superluminescent diodes
  • Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer
  • Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes
  • Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings
  • Theoretical study on erbium ytterbium co-doped super-fluorescent fiber source
  • A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch
  • Wide band low phase noise QVCO based on superharmonic injection locking
  • A high-linearity and high-resolution delay line structure with a calibration algorithm in delay-based LINC transmitters
  • A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18μm CMOS
  • A reference voltage in capacitor-resister hybrid SAR ADC for front-end readout system of CZT detector
  • A low jitter supply regulated charge pump PLL with self-calibration
  • PMGA and its application in area and power optimization for ternary FPRM circuit
  • Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor
  • Investigation of aluminum gate CMP in a novel alkaline solution
  • Advances and prospects in visible light communications(Chen Hongda;Wu Chunhui;Li Honglei;Chen Xiongbin;Gao Zongyu;Cui Shigang;Wang Qin)
    Synthesis and electroluminescence characterization of a new aluminum complex, [8- hydroxyquinoline] bis [2, 2'bipyridine] aluminum Al(Bpy)2q(Rahul Kumar;Ritu Srivastava;Punita Singh)
    New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials(Qin Xudong;Chen Yonghai;Liu Yu;Zhu Laipan;Li Yuan;Wu Qing;Huang Wei)
    Green preparation of Au nanoparticles for electrochemical detection of H2O2(Wang Wenchao;Ji Ye;Zhang Yong;Wang Ziying;Zhang Tong[2,3])
    Impact of Cu-rich growth on the CueZnSnSe4 surface morphology and related solar cells behavior(Sun Ding;Ge Yang;Zhang Li;Xu Shengzhi;Chen Ze;Wang Ning;Liang Xuejiao;Wei Changchun;Zhao Ying;Zhang Xiaodan)
    Excellent performance of gas sensor based on In2O3-Fe2O3 nanotubes(Liu Li;LiShouchun;Guo Xin;He Yue;Wang Lianyuan)
    Ageing of GaN HEMT devices: which degradation indicators?(A. Divay;O. Latry;C. Duperrier;F. Temcamani)
    Cu2O-based solar cells using oxide semiconductors(Tadatsugu Minami;Yuki Nishi;Toshihiro Miyata)
    Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys(Tangudu Bharat Kumar;Bahniman Ghosh[2,3];Bhaskar Awadhiya;Ankit Kumar Verma)
    Designing of I eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell(Wang Haixiao;Zheng Xinhe[1,2];Gan Xingyuan;Wang Naiming;Yang Hui)
    Sentaurus based modeling and simulation for GFET's characteristic for ssDNA im- mobilization and hybridization(Jia Yunfang;Ju Cheng)
    Active multi-mode-interferometer broadband superluminescent diodes(Wang Feifei;Jin Peng;Wu Ju;Wu Yanhua;Hu Fajie;Wang Zhanguo)
    Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer(Li Xiang;Zhao Degang;Jiang Desheng;Chen Ping;Liu Zongshun;Zhu Jianjun;Shi Ming;Zhao Danmei;Liu Wei)
    Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes(Cao Kewei;Fu Binglei;Liu Zhe;Zhao Lixia;Li Jinmin;Wang Junxi)
    Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings(Xiao Yunchang;Zhu Changyong;Wang Rixing)
    Theoretical study on erbium ytterbium co-doped super-fluorescent fiber source(Guo Wentao;Du Feng;Tan Manqing;Jiao Jian;Guo Xiaofeng)
    A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch(Zheng Zonghua[1,2];Sun Lingling;Liu Jun;Zhang Shengzhou[1,2])
    Wide band low phase noise QVCO based on superharmonic injection locking(Xu Yalan[1,2];Jiang Jinguang;Liu Jianghua)
    A high-linearity and high-resolution delay line structure with a calibration algorithm in delay-based LINC transmitters(Han Yue;Qiao Shushan;Hei Yong)
    A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18μm CMOS(Li Dong;Meng Qiao;Li Fei)
    A reference voltage in capacitor-resister hybrid SAR ADC for front-end readout system of CZT detector(Liu Wei;Wei Tingcun;Li Bo;Yang Lifeng;Hu Yongcai[1,2])
    A low jitter supply regulated charge pump PLL with self-calibration(Chen Min;Liu Yuntao;Li Zhichao;Xiao Jingbo;Chen Jie)
    PMGA and its application in area and power optimization for ternary FPRM circuit(Wang Pengjun;Li Kangping;Zhang Huihong)
    Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor(Yang Bijie;Zhou Ning;Sun Quanhua)
    Investigation of aluminum gate CMP in a novel alkaline solution(Feng Cuiyue;Liu Yuling;Sun Ming;Zhang Wenqian;Zhang Jin;Wang Shuai)
    《半导体学报》封面
      2010年
    • 01

    主管单位:中国科学院

    主办单位:中国电子学会 中国科学院半导体研究所

    主  编:王守武

    地  址:北京912信箱

    邮政编码:100083

    电  话:010-82304277

    电子邮件:cjs@semi.ac.cn

    国际标准刊号:issn 1674-4926

    国内统一刊号:cn 11-5781/tn

    邮发代号:2-184

    单  价:35.00

    定  价:420.00